gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 features ? gan on sic d - mode transistor technology ? unmatched, ideal for pulsed / cw applications ? 50 v typical bias, class ab ? common - source configuration ? thermally - enhanced 3 x 6 mm 14 - lead dfn ? mttf = 600 years (t j < 200c) ? halogen - free green mold compound ? rohs* compliant and 260c reflow compatible ? msl - 1 description the magx - 000035 - 01000p is a gan on sic unmatched power device offering the widest rf frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a true smt plastic - packaging technology. use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200c. the small package size and excellent rf performance make it an ideal replacement for costly flanged or metal - backed module components. ordering information 1,2 * restrictions on hazardous substances, european union directive 2002/95/ec. 1. reference application note m513 for reel size information. 2. when ordering sample evaluation boards, choose a standard frequency range indicated on page 4/5 or specify a desired custom range. custom requests may increase lead times. part number package magx - 000035 - 01000p bulk packaging magx - 000035 - 0100tp 500 piece reel magx - 000035 - pb4ppr sample board functional schematic pin configuration 3 pin no. function pin no. function 1 no connection 8 no connection 2 no connection 9 no connection 3 v gg /rf in 10 v dd /rf out 4 v gg /rf in 11 v dd /rf out 5 v gg /rf in 12 v dd /rf out 6 no connection 13 no connection 7 no connection 14 no connection 15 paddle 4 3. macom recommends connecting unused package pins to ground. 4. the exposed pad centered on the package bottom must be connected to rf and dc ground. nc nc nc nc nc nc nc nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 15 g g g d d d
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 parameter test conditions symbol min. typ. max. units dc characteristics drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - - 1.0 ma gate threshold voltage v ds = 5 v, i d = 2 ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5 v, i d = 250 ma g m 0.20 - - s dynamic characteristics input capacitance v ds = 0 v, v gs = - 8 v, f = 1 mhz c iss - 2.2 - pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 0.9 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 0.1 - pf electrical characteristics: t a = 25c electrical specifications 5 : freq. = 1.6 ghz, t a = 25c, z 0 = 50 parameter symbol min. typ. max. units cw rf functional tests: v dd = 50 v, i dq = 30 ma, p2.5 db cw output power p out - 10 - w pulsed rf functional tests: v dd = 50 v, i dq = 30 ma, p2.5 db, pulse width = 1 ms, duty cycle = 10% pulsed output power p out 9.2 10.6 - w pulsed power gain g p 14.2 14.8 - db pulsed drain efficiency d 52 56 - % load mismatch stability vswr - s - 5:1 - - load mismatch tolerance vswr - t - 10:1 - - typical performance: v dd = 50 v, i dq = 30 ma, t a = 25c parameter 30 mhz 1 ghz 2.5 ghz 3.5 ghz units gain 17 15 14 14 db saturated power (p sat ) 13 11 10 10 w power gain at p sat 15 14 13 12 db pae @ p sat 65 55 53 50 % 5. electrical specifications measured in macom rf evaluation boards. see recommended tuning solutions on page 4.
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 parameter absolute max. input power p out - g p + 2.5 dbm drain supply voltage, v dd +65 v gate supply voltage, v gg - 8 v to 0 v supply current, i dd 500 ma power dissipation, cw @ 85oc 12 w power dissipation (p avg ), pulsed @ 85 c 12 w junction temperature 11 200c operating temperature - 40c to +95c storage temperature - 65c to +150c esd maximum - human body model (hbm) 400 v esd maximum - charged device model (cdm) 150 v absolute maximum ratings 6,7,8,9,10 6. exceeding any one or combination of these limits may cause permanent damage to this device. 7. macom does not recommend sustained operation near these survivability limits. 8. for saturated performance it is recommended that the sum of (3 * v dd + abs (v gg )) < 175 v. 9. cw operation at v dd voltages above 50 v is not recommended. 10. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. junction temperature directly affects device mttf and should be kept as low as possible to maximize lifetime. 11. junction temperature (t j ) = t c + ? jc * ((v * i) - (p out - p in )) typical cw thermal resistance ( ? jc ) = 5.8c/w a) for t c = 83c, t j = 124c @ 50 v, 330 ma, p out = 10w, p in = 0.6w typical transient thermal resistances: b) 300 s pulse, 10% duty cycle, ? jc = 1.94c/w for t c = 83c, t j = 97c @ 50 v, 325ma, p out = 9.8w, p in = 0.6 w c) 1 ms pulse, 10% duty cycle, ? jc = 2.01c/w for t c = 83c, t j = 98c @ 50 v, 325ma, p out = 9.8w, p in = 0.6w d) 1 ms pulse, 20% duty cycle, ? jc = 2.56c/w for t c = 83c, t j = 101c @ 50 v, 325 ma, p out = 9.8 w, p in = 0.6 w
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 parts list (n/a = not applicable for this tuning solution) parts measured on evaluation board (8 - mil thick ro4003c). electrical and thermal ground is provided using copper - filled via hole array (not pictured), and evaluation board is mounted to a metal plate. matching is provided using lumped elements as shown at left. recommended tuning solutions for 3 frequency ranges are detailed in the parts list below. evaluation board details and recommended tuning solutions turning the device on 1. set v g to the pinch - off (v p ), typically - 5 v. 2. turn on v d to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v g down to v p. 3. decrease v d down to 0 v. 4. turn off v g . bias sequencing part frequency = 900 - 1400 mhz frequency = 1600 mhz frequency = 1625 - 1675 mhz c1 0402, 6.8 pf, 5%, 200v atc 0402, 4.7 pf, 0.1pf, 200 v, atc 0402, 3.3 pf, 0.1pf, 200 v, atc c2 0603, 6.8 pf, 0.1 pf, 250 v, atc 0603, 8.2 pf, 0.1 pf, 250 v, atc 0603, 8.2 pf, 0.1 pf, 250 v, atc c3 0603, 82 pf, 10%, 250 v, atc 0603, 68 pf, 10%, 250 v, atc 0603, 68 pf, 10%, 250 v, atc c4 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c5 n/a 0603, 1.5 pf, 0.1 pf, 250 v, atc n/a c6 n/a n/a 0603, 1.5 pf, 0.1 pf, 250 v, atc c7 0603, 39 pf, 10%, 250 v, atc 0603, 20 pf, 10% pf, 250 v, atc 0603, 20 pf, 10% pf, 250 v, atc c8 0603, 82 pf, 10%, 250 v, atc 0603, 68 pf, 10%, 250 v, atc 0603, 68 pf, 10%, 250 v, atc c9 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c10 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c11 n/a n/a n/a c12 n/a 0603, 10 pf, 0.1 pf, 250 v, atc 0603, 6.8 pf, 0.1 pf, 250 v, atc r1 240 , 0603, 5% 200 , 0603, 5% 200 , 0603, 5% r2 1.0 , 0603, 5% 1.0 , 0603, 5% 1.0 , 0603, 5% r3 1.0 , 0603, 5% 1.0 , 0603, 5% 1.0 , 0603, 5% r4 8.2 , 0603, 5% 33 , 0603, 5% 75 , 0603, 5% l1 0402hp, 3.3 nh, 5%, coilcraft 0402hp, 2.7 nh, 5%, coilcraft shorting tab l2 0603hp, 6.8 nh, 5%, coilcraft 0603hp, 1.6 nh, 5%, coilcraft 0603hp, 1.6 nh, 5%, coilcraft l3 0402cs, 4.3 nh, 5%, coilcraft 0402hp, 2.7 nh, 5%, coilcraft 0402hp, 2.7 nh, 5%, coilcraft l4 0402cs, 3.3nh 5% (900 - 1300mhz); or 2.4nh, 5% for 1000mhz - 1400mhz, coilcraft 0402hp, 2.7 nh, 5%, coilcraft 0402hp, 2.7 nh, 5%, coilcraft
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 parts list parts measured on evaluation board (8 - mil thick ro4003c). electrical and thermal ground is provided using copper - filled via hole array (not pictured), and evaluation board is mounted to a metal plate. matching is provided using lumped elements as shown at left. recommended tuning solutions for 3 frequency ranges are detailed in the parts list below. evaluation board details and recommended tuning solutions 2700 - 3600 mhz turning the device on 1. set v g to the pinch - off (v p ), typically - 5 v. 2. turn on v d to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v g down to v p. 3. decrease v d down to 0 v. 4. turn off v g . bias sequencing part frequency = 2700 - 3600 mhz c1, c12 0402 0.7 pf, 0.05 pf, 200 v, atc c2 0402, 1.3 pf, 0.05 pf, 200 v, atc c3 0402, 2.7 pf, 0.1 pf, 200 v, atc c4, c9 0805, 1000 pf, 100 v, 5%, avx c5 0402, 2.2 pf, 0.1 pf, 200 v, atc c6 0402, 2.0 pf, 0.1 pf, 200 v, atc c7 0603, 10 pf, 5%, 200 v, atc c8 0402 10 pf, 5%, 200 v, atc c10 1210, 1uf, 100 v, 20%,, atc r1 200 ohm, 0603, 5% r2 shorting tab r3 1 ohm, 0603, 5% l1 shorting tab l2 shorting tab l3 0603cs, 10nh, 5%, coilcraft l4, l6 0402hp, 1.0nh, 5%, coilcraft l5 0402hp, 12nh, 5%, coilcraft
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride devices and circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 1a devices. lead - free 3x6 mm 14 - lead dfn ? ? reference application note s2083 for lead - free solder reflow recommendations. meets jedec moisture sensitivity level 1 requirements. plating is ni/pd/au.
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 applications section power (output & dissipated) and transient junction temperature vs. pulse duration and duty cycle thermal performance: freq. = 1200 mhz, t c = 85c, v dd = +50 v, i dq = 30 ma, z 0 = 50 junction temperature measured using high - speed transient (hst) temperature detection microscopy. pulse width, 100 s, 10% 100 s, 20% 300 s, 10% 300 s, 20% 500 s, 10% 500 s, 20% 1000 s, 10% 1000 s, 20% 8000 s, 9.2% duty cycle power dissipation (w) 6.8 7.1 6.9 7.1 6.9 7.1 6.9 7.1 7.0 1.2 ghz p out (w) 9.79 9.75 9.75 9.75 9.75 9.75 9.75 9.75 9.90 max. transient junction temp. ( o c) 92.5 93.1 97.3 96.7 98.3 98.5 97.8 102.2 100.7 90 92 94 96 98 100 102 104 5 6 7 8 9 10 11 100 s, 10% 100 s,20% 300 s,10% 300 s,20% 500 s,10% 500 s,20% 1000 s,10% 1000 s,20% 8000 s,9.2% transient junction temperature ( c) power output (w) and dissipated (w) pulse width (s), duty cycle (%) dissipated power output power max. transient junction temp.
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 8 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 applications section power gain vs. frequency output power vs. frequency drain efficiency vs. frequency typical pulsed performance curves ( reference 900 mhz - 1400 mhz parts list, l4 = 2.4 nh ): 900 - 1400 mhz, 200 s pulse, 20% duty cycle, p in = 0.5 w, v dd = +50 v, t a = 25c, z 0 = 50 input return loss vs. frequency pulse droop vs. frequency output drive & power gain vs. input power 10 12 14 16 18 20 22 2 4 6 8 10 12 14 0.0 0.2 0.4 0.6 0.8 1.0 power gain (db) output power (wpk) input power (wpk) 900mhz_p 1200mhz_p 1300mhz_p 1400mhz_p 900mhz_g 1200mhz_g 1300mhz_g 1400mhz_g - 25 - 20 - 15 - 10 - 5 0 900 1000 1100 1200 1300 1400 s11 (db) frequency (mhz) 0.00 0.02 0.04 0.06 0.08 0.10 900 1000 1100 1200 1300 1400 pulse droop (db) frequency (mhz) 10 11 12 13 14 15 900 1000 1100 1200 1300 1400 power gain (db) frequency (mhz) 10 11 12 13 14 15 900 1000 1100 1200 1300 1400 output power (wpk) frequency (mhz) 50 54 58 62 66 70 900 1000 1100 1200 1300 1400 drain efficiency (%) frequency (mhz)
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 9 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 applications section power gain vs. input power output power vs. input power drain efficiency vs. input power typical cw performance curves ( reference 1625mhz - 1675mhz parts list ): 1650 mhz, v dd = +50 v/+28 v, i dq = 30 ma, cw, t a = 25c, z 0 = 50 input return loss vs. frequency 0 15 30 45 60 75 0.0 0.1 0.2 0.3 0.4 0.5 0.6 drain efficiency (%) input power (w) +28v +50v 0 3 6 9 12 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 output power (w) input power (w) +28v +50v 0 4 8 12 16 20 0.0 0.1 0.2 0.3 0.4 0.5 0.6 power gain (db) input power (w) +28v +50v - 20 - 16 - 12 - 8 - 4 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 s11 (db) input power (w) +28v +50v
gan wideband 10 w cw / pulsed transistor in plastic package dc - 3.5 ghz rev. v2 magx - 000035 - 01000p 10 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 applications section power gain vs. frequency output power vs. frequency drain efficiency vs. frequency typical s - band performance curves ( reference 2.7 - 3.6 ghz parts list ): 2.7 - 3.6 ghz, 200 s pulse, 20% duty cycle, p in = 0.8 w, v dd = +50 v/+45 v, t a = 25c, z 0 = 50 input return loss vs. frequency pulse droop vs. frequency - 20 - 15 - 10 - 5 0 2.70 2.85 3.00 3.15 3.30 3.45 3.60 s11 (db) frequency (ghz) + 45v + 50v 0.00 0.05 0.10 0.15 0.20 2.70 2.85 3.00 3.15 3.30 3.45 3.60 power droop (db) frequency (ghz) + 45v + 50v 8 9 10 11 12 2.70 2.85 3.00 3.15 3.30 3.45 3.60 output power (wpk) frequency (ghz) + 45v + 50v 40 45 50 55 60 2.70 2.85 3.00 3.15 3.30 3.45 3.60 drain efficiency (%) frequency (ghz) + 45v + 50v 10.0 10.5 11.0 11.5 12.0 2.70 2.85 3.00 3.15 3.30 3.45 3.60 power gain (db) frequency (ghz) + 45v + 50v
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